High-performance field emission device utilizing vertically aligned carbon nanotubes-based pillar architectures

TitleHigh-performance field emission device utilizing vertically aligned carbon nanotubes-based pillar architectures
Publication TypeJournal Article
Year of Publication2018
AuthorsGupta, BKumar, Kedawat, G, Gangwar, AKumar, Nagpal, K, Kashyap, PKumar, Srivastava, S, Singh, S, Kumar, P, Suryawanshi, SR, Seo, DMin, Tripathi, P, More, MA, Srivastava, ON, Hahm, MGwan, Late, DJ
JournalAIP Advances
Volume8
Issue1
Pagination015117
Date PublishedJAN
Type of ArticleArticle
ISSN2158-3226
Abstract

The vertical aligned carbon nanotubes (CNTs)-based pillar architectures were created on laminated silicon oxide/silicon (SiO2/Si) wafer substrate at 775 degrees C by using water-assisted chemical vapor deposition under low pressure process condition. The lamination was carried out by aluminum (Al, 10.0 nm thickness) as a barrier layer and iron (Fe, 1.5 nm thickness) as a catalyst precursor layer sequentially on a silicon wafer substrate. Scanning electron microscope (SEM) images show that synthesized CNTs are vertically aligned and uniformly distributed with a high density. The CNTs have approximately 2-30 walls with an inner diameter of 3-8 nm. Raman spectrum analysis shows G-band at 1580 cm(-1) and D-band at 1340 cm(-1). The G-band is higher than D-band, which indicates that CNTs are highly graphitized. The field emission analysis of the CNTs revealed high field emission current density (4mA/cm(2) at 1.2V/mu m), low turn-on field (0.6 V/mu m) and field enhancement factor (6917) with better stability and longer lifetime. Emitter morphology resulting in improved promising field emission performances, which is a crucial factor for the fabrication of pillared shaped vertical aligned CNTs bundles as practical electron sources. (c) 2018 Author(s).

DOI10.1063/1.5004769
Type of Journal (Indian or Foreign)

Foreign

Impact Factor (IF)

1.568

Divison category: 
Physical and Materials Chemistry