Characterization of MoSe2 thin film deposited at room temperature from solution phase

TitleCharacterization of MoSe2 thin film deposited at room temperature from solution phase
Publication TypeJournal Article
Year of Publication2008
AuthorsHankare, PP, Patil, AA, Chate, PA, Garadkar, KM, Sathe, DJ, Manikshete, AH, Mulla, IS
JournalJournal of Crystal Growth
Volume311
Issue1
Pagination15-19
Date PublishedDEC
Type of ArticleArticle
ISSN0022-0248
KeywordsCrystal morphology, Growth from solution, Inorganic compound, Polycrystalline deposition, Semiconducting materials, X-ray diffraction
Abstract

A simple, low-temperature method has been developed to synthesis molybdenum diselenide semiconductor thin films, based on the chemical reaction of conlplexed ammonium molybdate, hydrazine hydrate and sodium Selenosulphate in aqueous alkaline medium. The deposition parameter of the MoSe2 thin film is interpreted in the present investigation. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption and electrical measurements. The deposited film was found to be polycrystalline in hexagonal form. The direct band gap `E-g' for the film was found to be 1.43eV and electrical conductivity in the order of 10(-2)(Omega cm)(-1) with n-type conduction mechanism. (C) 2008 Elsevier B.V. All rights reserved.

DOI10.1016/j.jcrysgro.2008.09.188
Type of Journal (Indian or Foreign)

Foreign

Impact Factor (IF)

1.462

Divison category: 
Physical and Materials Chemistry